Formation of stable Si–O–C submonolayers on hydrogen-terminated silicon(111) under low-temperature conditions

• Yit Lung Khung,
• Siti Hawa Ngalim,
• Andrea Scaccabarozzi and
• Dario Narducci

Beilstein J. Nanotechnol. 2015, 6, 19–26, doi:10.3762/bjnano.6.3

• essential towards directing the nature of surface linkage. Keywords: hydrogen abstraction; thermal hydrosilylation; UV-initated hydrosilylation; X-ray photoelectron spectroscopy; Introduction Forming covalently-attached organic submonolayers on silicon remains one of the challenges in surface science. In

• acids [3][4], through an intermediate halogenation followed by Grignard chemistry [7], through UV irradiation on the surface [8] or thermally driven [9][10]. In recent years, thermal hydrosilylation has emerged as an attractive alternative due to the lack of potentially contaminating catalysts as well

• undisputed. However, as early as 2005, Wood et al. brought to attention that the cleavage of Si–H to form initial silyl radicals might not be the only mode for hydrosilylation to occur [12]. Typically, the commonly accepted notion is that thermal hydrosilylation requires temperatures above 150 °C in order to

In situ metalation of free base phthalocyanine covalently bonded to silicon surfaces

• Fabio Lupo,
• Cristina Tudisco,
• Federico Bertani,
• Enrico Dalcanale and
• Guglielmo G. Condorelli

Beilstein J. Nanotechnol. 2014, 5, 2222–2229, doi:10.3762/bjnano.5.231

• , (100)-oriented silicon substrate was performed through a well establish thermal hydrosilylation route [37][38]. Similarly to the procedure described in [38], Si(100) substrates were first cleaned with ‘‘piranha’’ solution (H2SO4 (30%)/H2O2 70:30, v/v) at room temperature for 12 min, rinsed in double